Methods of forming a thin film and methods of manufacturing a capacitor and a gate structure using the same
US7642200B2 · kind B2 · utility
0Cited by
2References
25Claims
0Family size
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Key dates
| Filing date | Jan 13, 2006 |
| Grant date | Jan 5, 2010 |
| Priority date | — |
| Expiry date | Jan 5, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a thin film is provided. The method includes introducing an organometallic compound represented by the following formula onto a substrate;
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.