Phase change memory cells delineated by regions of modified film resistivity
US7642549B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2009 |
| Grant date | Jan 5, 2010 |
| Priority date | — |
| Expiry date | Mar 19, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/734
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A Phase Change Memory (PCM) cell structure comprises both a lower electrode composed of a PCM layer and a conductive encapsulating upper electrode layer. The PCM layer is protected from damage by the conductive encapsulating layer. Electrical isolation between adjacent PCM cells is provided by high electrical resistance regions which were formed by modifying the conductivity of both the PCM layer and the conductive encapsulating upper electrode layer subsequent to deposition thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.