Image sensor comprising pixels with one transistor
US7642579B2 · kind B2 · utility
0Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2007 |
| Grant date | Jan 5, 2010 |
| Priority date | — |
| Expiry date | Aug 5, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
A pixel having a MOS-type transistor formed in and above a semiconductor substrate of a first doping type, a buried semiconductor layer of a second doping type being placed in the substrate under the MOS transistor and separated therefrom by a substrate portion forming a well. The buried semiconductor layer comprises a thin portion forming a pinch area placed under the transistor channel area and a thick portion placed under all or part of the source/drain areas of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.