Patent · US Active

Multi-bit-per-cell flash memory device with non-bijective mapping

US7643342B2 · kind B2 · utility

51Cited by

11References

30Claims

0Family size

Assignee

Ramot at Tel-Aviv University Ltd. · IL

Inventors

Simon Litsyn · Givat Shmuel, IL
Eran Sharon · Rishon LeZion, IL
Idan Alrod · Herzliya, IL

Key dates

Filing date	Mar 11, 2008
Grant date	Jan 5, 2010
Priority date	—
Expiry date	Mar 11, 2028

Classification

Technology area (CPC G)Physics
CPC primaryG11C2211/5641
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

To store a plurality of input bits, the bits are mapped to a corresponding programmed state of one or more memory cells and the cell(s) is/are programmed to that corresponding programmed state. The mapping may be many-to-one or may be an “into” generalized Gray mapping. The cell(s) is/are read to provide a read state value that is transformed into a plurality of output bits, for example by maximum likelihood decoding or by mapping the read state value into a plurality of soft bits and then decoding the soft bits.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.