Differential pressure sense die based on silicon piezoresistive technology
US7644625B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 14, 2007 |
| Grant date | Jan 12, 2010 |
| Priority date | — |
| Expiry date | Dec 14, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L13/025
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and apparatus for designing a differential pressure sense die based on a unique silicon piezoresistive technology for sensing low differential pressure in harsh duty applications is disclosed. The pressure sense die comprises of an etched pressure diaphragm and a hole that is drilled through the sense die wherein the pressure sense die possess a backside and a front side and are associated with varying pressures. A top cap can be attached to the front side and an optional constraint for stress relief can be attached to the backside of the differential pressure sense die. The top cap and the constraint comprise of glass and/or silicon and can be attached with an anodic bonding process or glass frit process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.