Manufacture of electronic devices comprising thin-film circuit elements
US7645646B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 6, 2003 |
| Grant date | Jan 12, 2010 |
| Priority date | — |
| Expiry date | Jun 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/13
Abstract
In the manufacture of an electronic device such as an active matrix display, a vertical amorphous PIN photodiode or similar thin-film diode (D) is advantageously integrated with a polysilicon TFT (TFT1, TFT2) in a manner that permits a good degree of optimization of the respective TFT and diode properties while being compatible with the complex pixel context of the display. High temperature processes for making the active semiconductor film (10) of the TFT more crystalline than an active semiconductor film (40) of the diode and for forming the source and drain doped regions (s1,s2, d1,d2) of the TFT are carried out before depositing the active semiconductor film (40) of the diode. Thereafter, the lateral extent of the diode is defined by etching while protecting with an etch-stop film (30) an interconnection film (20) that can provide a doped bottom electrode region (41) of the diode as well as one of the doped regions (s2, g1) of the TFT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.