Semiconductor device having shallow b-doped region and its manufacture
US7645665B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2006 |
| Grant date | Jan 12, 2010 |
| Priority date | — |
| Expiry date | Aug 7, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/017
Abstract
A method for manufacturing a semiconductor device has the steps of: (a) implanting boron (B) ions into a semiconductor substrate; (b) implanting fluorine (F) or nitrogen (N) ions into the semiconductor device; (c) after the steps (a) and (b) are performed, executing first annealing with a heating time of 100 msec or shorter relative to a region of the semiconductor substrate into which ions were implanted; and (d) after the step (c) is performed, executing second annealing with a heating time longer than the heating time of the first annealing, relative to the region of the semiconductor substrate into which ions were implanted. The method for manufacturing a semiconductor device is provided which can dope boron (B) shallowly and at a high concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.