Organic thin film transistor and manufacturing method thereof
US7646012B2 · kind B2 · utility
1Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Aug 18, 2006 |
| Grant date | Jan 12, 2010 |
| Priority date | — |
| Expiry date | Sep 29, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/466
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An organic thin film transistor includes a substrate, a gate electrode, a gate insulating layer, a first electrode, and a second electrode disposed on the substrate, a first layer disposed on the substrate, the first layer being photosensitive, a second layer disposed on the first layer, the second layer being hydrophobic, an opening defined in the first and second layers, the opening corresponding to the gate electrode, and a hydrophilic organic semiconductor disposed in the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.