Organic thin film transistor comprising fluorine-based polymer thin film and method for fabricating the same
US7646014B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2006 |
| Grant date | Jan 12, 2010 |
| Priority date | — |
| Expiry date | Nov 9, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/113
Abstract
Disclosed is an organic thin film transistor, including a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, and source/drain electrodes, in which a fluorine-based polymer thin film is provided between the source/drain electrodes and the organic semiconductor layer. A method of fabricating such an organic thin film transistor is also provided. According to example embodiments, the organic thin film transistor may have increased charge mobility and an Ion/Ioff ratio, due to decreased contact resistance between the source/drain electrodes and the organic semiconductor layer. Moreover, upon the formation of the organic semiconductor layer and insulating film, a wet process may be more easily applied, thus simplifying the fabrication process and decreasing the fabrication cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.