Thin film transistor and thin film transistor array panel
US7646044B2 · kind B2 · utility
6Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2004 |
| Grant date | Jan 12, 2010 |
| Priority date | — |
| Expiry date | Nov 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
Abstract
A thin film transistor is provided, which includes: a semiconductor layer including an intrinsic portion; a gate electrode overlapping the intrinsic portion; a gate insulating layer disposed between the semiconductor layer and the gate electrode; and source and drain electrodes that have edges opposing each other with respect to the intrinsic portion of the semiconductor layer and are connected to the semiconductor layer, wherein the intrinsic portion has a curved surface contacting the gate insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.