Patent · US Active

Edge emitting semiconductor laser comprising a plurality of monolithically integrated laser diodes

US7646799B2 · kind B2 · utility

2Cited by

7References

15Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Peter Brick · Regensburg, DE
Johann Luft · Wolfsegg, DE
Martin Muller · Chicago, US
Marc Philippens · Regensburg, DE

Key dates

Filing date	Sep 25, 2007
Grant date	Jan 12, 2010
Priority date	—
Expiry date	Dec 17, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/4087
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An edge emitting semiconductor laser containing a plurality of monolithically integrated laser diodes (1, 2, 3). Each laser diode (1, 2, 3) contains an active zone (11, 12, 13), with the active zones (11, 12, 13) being in each case arranged between waveguide layers (6), the waveguide layers (6) in each case adjoining a cladding layer (7, 8) at a side remote from the active zone (11, 12, 13). The cladding layers (7, 8) comprise inner cladding layers (7), which are arranged above a bottommost active zone (11) and below a topmost active zone (13), and outer cladding layers (8) which are arranged below the bottommost active zone (11) or above the topmost active zone (13). The inner cladding layers (7) have a smaller thickness than the outer cladding layers (8).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.