Low-voltage organic thin film transistor and fabrication method thereof
US7648852B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2007 |
| Grant date | Jan 19, 2010 |
| Priority date | — |
| Expiry date | Apr 5, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/40
Abstract
The present invention provides an organic thin film transistor (OTFT) being operatable at a low-voltage. The OTFT has a gate dielectric layer of ultra-thin metal oxide or a dual gate dielectric layer of metal oxide and organic dielectric. The metal oxide layer is self-grown to a thickness lower than 10 nm by direct oxidation of a metal gate electrode in O2 plasma process at a temperature lower than 100° C. The gate electrode is deposited with pattern on a plastic or glass substrate. An organic semiconductor layer is deposited on the gate dielectric layer, and source/drain electrodes are formed thereon. In case the dual gate dielectric layer is used, the source/drain electrodes can be disposed under the organic semiconductor layer to realize a bottom contact structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.