Methods of forming metal oxide layers, methods of forming gate structures using the same, and methods of forming capacitors using the same
US7648854B2 · kind B2 · utility
3Cited by
3References
19Claims
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Key dates
| Filing date | Nov 16, 2007 |
| Grant date | Jan 19, 2010 |
| Priority date | — |
| Expiry date | Jun 9, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided herein are methods of forming a metal oxide layer that include providing an organometallic compound and an oxidizing agent to the substrate to form the metal oxide layer on the substrate. The organometallic compound may have the general formula of M(NR1R2)3R3, wherein M is a metal; R1 and R2 are each independently hydrogen or alkyl; and R3 is selected from the group consisting of alkyl, cycloalkyl, heterocycloalkyl, aryl and heteroaryl.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.