Method for fabricating a semiconductor device
US7648867B2 · kind B2 · utility
8Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2008 |
| Grant date | Jan 19, 2010 |
| Priority date | — |
| Expiry date | May 2, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0614
Abstract
A method for fabricating a semiconductor device includes: forming a dummy gate that defines a region in which a gate electrode should be formed on a semiconductor substrate; forming a surface film on the semiconductor substrate by directional sputtering vertical to a surface of the semiconductor substrate, the directional sputtering being one of collimate sputtering, long throw sputtering and ion beam sputtering; removing the surface film formed along a sidewall of the dummy gate; removing the dummy gate; and forming the gate electrode in the region from which the dummy gate on the semiconductor substrate has been removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.