Method of preparing a sample for transmission electron microscopy

US7649173B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

• Jianqiang Hu · Shanghai, CN
• Zhixian Rui · Shanghai, CN
• Yanli Zhao · Beijing, CN
• Yanjun Wang · Shanghai, CN
• Ming Li · Shanghai, CN
• Min-Cheng Pan · Shanghai, CN

Key dates

• Filing date: Dec 29, 2006
• Grant date: Jan 19, 2010
• Expiry date: Jul 30, 2028

Classification

• Technology area (CPC G): Physics
• CPC primary: G01N1/32
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A method for preparing TEM sample, comprising the following steps: providing a sample with two pits and a failure region between the two pits, the failure region comprising a semiconductor device; milling the first surface of the failure region, till the cross section of the semiconductor device is exposed; etching the first surface of the failure region; cleaning the sample; milling the second surface of the failure region, till the failure region can be passed by electron beam. A sample can be prepared for a high resolution TEM through above steps. When the sample is observed, it is easy to distinguish the lightly doped drain, source/drain regions from the silicon substrate and observe the pattern and defects in the lightly doped drain, source/drain regions clearly; in addition, it is easy to distinguish the BPSG from the non-doped silicon dioxide in the failure region.