Transistor, method of fabricating the same, and light emitting display comprising the same
US7649202B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 21, 2005 |
| Grant date | Jan 19, 2010 |
| Priority date | — |
| Expiry date | Oct 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/12
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A light emitting display comprises: at least one first metal layer; a second metal layer crossing the first metal layer and having a first width; a light emitting device formed adjacent to a region where the first metal layer and the second metal layer cross each other; and a pixel circuit including at least one transistor which causes the light emitting device to emit light. The transistor comprises a semiconductor layer having a second width greater than the first width. With this configuration, in the light emitting display of the present invention, the semiconductor layer of the transistor is formed in a region where the source/drain metal layer and the gate metal layer cross each other, and has a width greater than that of the source/drain metal layer, so that the source/drain metal layer is disposed within the width of the semiconductor layer. Thus, a tip of the gate metal layer, formed in the grain and the pattern edge of the semiconductor layer, is not disposed within the region overlapping the source/drain metal layer so that generation of static electricity between the gate metal layer and the source/drain metal layer is prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.