Thin film field effect transistors having Schottky gate-channel junctions

US7649217B2 · kind B2 · utility

Inventors

• Arash Takshi · Tampa, US
• John Madden · Vancouver, CA

Key dates

• Filing date: Mar 24, 2006
• Grant date: Jan 19, 2010
• Expiry date: Feb 24, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/87

Abstract

An active electronic device has drain and source electrodes that make ohmic conduct with a layer of a semiconductor. The semiconductor layer may be a thin layer of an organic or amorphous semiconductor. The drain and source electrodes are on a first face of the layer of semiconductor at locations that are spaced apart on either side of a channel. The device has a gate electrode on a second face of the layer of semiconductor adjacent to the channel. The gate electrode makes a Schottky contact with the semiconductor to produce a depletion region in the channel. The gate electrode may encapsulate the channel so that the channel is protected from contact with oxygen, water molecules or other materials in the environment. In some embodiments, the device has an additional gate electrode separated from the semiconductor layer by an insulating layer. Such embodiments combine features of OFETs and MESFETs.