Semiconductor memory device with vertical fuse
US7649240B2 · kind B2 · utility
7Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2007 |
| Grant date | Jan 19, 2010 |
| Priority date | — |
| Expiry date | Feb 9, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device having an improved fuse structure may include an interlayer insulating film on a semiconductor substrate, an opening in the interlayer insulating film, a vertical fuse that may conform to the opening, a fuse insulating film on the vertical fuse that may fill the opening, and metal wiring lines that may be electrically connected to the vertical fuse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.