Method for manufacturing nitride semiconductor laser element, and nitride semiconductor laser element
US7649923B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2007 |
| Grant date | Jan 19, 2010 |
| Priority date | — |
| Expiry date | Nov 5, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for manufacturing a nitride semiconductor laser element, equipped with a laminate that has a first conductivity type nitride semiconductor layer, an active layer, and a second conductivity type nitride semiconductor layer on a substrate, and constitutes a resonator, comprises the steps of: forming a first auxiliary groove having an exposed region extending in the resonator direction of the laser element and in which at least the second conductivity type nitride semiconductor layer and the active layer are removed from the second conductivity type nitride semiconductor layer side on both sides in the resonator direction of an element region where the laser element is formed on the surface of the laminate, thereby exposing the first conductivity type nitride semiconductor layer, and two protrusion regions that are narrower than the exposed region and protrude in the resonator direction from the exposed region; forming a second auxiliary groove whose angle of inclination of the side faces with respect to the normal direction versus the substrate surface is greater than that of the first auxiliary groove within the exposed region; and dividing the substrate and the laminate wi…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.