Manufacturing method of a nonvolatile semiconductor memory device
US7651914B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2008 |
| Grant date | Jan 26, 2010 |
| Priority date | — |
| Expiry date | Jul 21, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
Abstract
A manufacturing method of a nonvolatile semiconductor memory device including: providing a first insulating film and a silicon film on a semiconductor substrate; providing a fifth insulating film containing silicon and oxygen on the silicon film; providing a second insulating film containing silicon and nitrogen on the fifth insulating film; providing a third insulating film on the second insulating film, the third insulating film is composed of a single-layer insulating film containing oxygen or multiple-layer stacked insulating film at least whose films on a top layer and a bottom layer contain oxygen, and relative dielectric constant of the single-layer insulating film and the stacked insulating film being larger than relative dielectric constant of a silicon oxide film; providing a fourth insulating film containing silicon and nitrogen on the third insulating film; and providing a control gate above the fourth insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.