Method of fabricating semiconductor memory device in which an oxide film fills a trench in a semiconductor substrate
US7651924B2 · kind B2 · utility
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2References
9Claims
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Key dates
| Filing date | Sep 18, 2008 |
| Grant date | Jan 26, 2010 |
| Priority date | — |
| Expiry date | Sep 18, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes applying a coating oxide film to a surface of a substrate including a semiconductor substrate so that a recess formed in the surface is filled with the coating oxide film, applying a steam oxidation treatment to the substrate at a first temperature, soaking the substrate in heated water while applying a megasonic wave to the substrate in the heated water, and applying a steam oxidation treatment to the substrate at a second temperature higher than the first temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.