Method for crystallizing a semiconductor thin film
US7651928B2 · kind B2 · utility
7Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2007 |
| Grant date | Jan 26, 2010 |
| Priority date | — |
| Expiry date | Jun 22, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for crystallizing a semiconductor thin film is provided. The method includes continuously irradiating an energy beam on a semiconductor thin film while scanning at a given speed. The energy beam is scanned in parallel lines while keeping pitches of not larger than an irradiation radius of the energy beam to grow band-shaped crystal grains in a direction different from a scanning direction of the energy beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.