Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof

US7653111B2 · kind B2 · utility

Assignee

• OSRAM GmbH · DE

Inventors

• Tony Albrecht · Bad Abbach, DE
• Norbert Linder · Wenzenbach, DE
• Johann Luft · Wolfsegg, DE

Key dates

• Filing date: Oct 12, 2005
• Grant date: Jan 26, 2010
• Expiry date: Oct 12, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S2301/166
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.