Method of fabricating thin film transistor
US7655127B2 · kind B2 · utility
1Cited by
8References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2006 |
| Grant date | Feb 2, 2010 |
| Priority date | — |
| Expiry date | Aug 5, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Method of fabricating electronic devices is disclosed. The method includes the steps of forming an anodized layer that has a thickness greater than a desired thickness, and forming an electrically conductive layer on the anodized layer. The method further includes the steps of removing the conductive layer in a selected area to expose the anodized layer, and removing the exposed anodized layer until the anodized layer in the exposed area has the desired thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.