Metal lift-off systems and methods using liquid solvent and frozen gas
US7655496B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2007 |
| Grant date | Feb 2, 2010 |
| Priority date | — |
| Expiry date | Jul 31, 2027 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0146
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of fabricating a semiconductor device includes patterning a layer of photoresist onto a surface of a wafer to define metal feature areas and residual metal areas. A layer of metal is deposited over the patterned layer of photoresist, the metal layer includes metal feature portions in the metal feature areas, residual metal areas in the residual metal areas, and residual metal flaps at the edges of the metal feature portions. The wafer is sprayed with high-pressure solvent at a pressure to dissolve the layer of photoresist and to physically remove the residual metal portions from the residual metal areas, leaving only at least a portion of the residual metal flaps. The wafer is sprayed with a stream of frozen gas particles to remove the residual metal flaps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.