Patent · US Active

Infrared detector elements and methods of forming same

US7655909B2 · kind B2 · utility

15Cited by

91References

37Claims

0Family size

Assignee

L-3 COMMUNICATIONS CORPORATION · US

Inventors

Thomas R. Schimert · Ovilla, US
Athanasios J. Syllaios · Richardson, US
William L. McCardel · Plano, US
Roland W. Gooch · Dallas, US

Key dates

Filing date	Nov 30, 2006
Grant date	Feb 2, 2010
Priority date	—
Expiry date	Aug 13, 2027

Classification

Technology area (CPC G)Physics
CPC primaryG01J2005/0077
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Infrared detector elements and methods for forming infrared detector elements in which the top metal layer of CMOS circuitry of the detector element is employed as a lead metal reflector for the infrared detector.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.