Semiconductor structure
US7655978B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 27, 2007 |
| Grant date | Feb 2, 2010 |
| Priority date | — |
| Expiry date | Sep 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor structure including a substrate, a first well, a second well, a third well, a first doped region, and a second doped region. The substrate includes a first conductive type. The first well includes a second conductive type and is formed in the substrate. The second well includes the second conductive type and is formed in the first well. The third well includes the first conductive type, is formed in the substrate, and neighbors the first well. The first doped region includes the first conductive type and is formed in the first well. The second doped region includes the first conductive type and is formed in the first well. The first well surrounds all surfaces of the first and the second doped regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.