Tunnel magnetoresistance device with tunnel barrier layer containing residual carbon
US7656622B2 · kind B2 · utility
4Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2005 |
| Grant date | Feb 2, 2010 |
| Priority date | — |
| Expiry date | May 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The TMR device has a structure including a lower electrode layer, a pinned layer, a tunnel barrier layer, a free layer, and an upper electrode layer which are successively formed on a substrate. The tunnel barrier layer has substantially a stoichiometric composition. The tunnel barrier layer may be a thin film of an oxide of AL formed by ALD method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.