Patent · US Active

Integrated circuit having a resistively switching memory and method

US7656697B2 · kind B2 · utility

0Cited by

3References

21Claims

0Family size

Assignee

Qimonda AG · DE

Inventors

Michael Markert · Augsburg, DE
Milena Dimitrova · Unterhaching, DE
Heinz Hoenigschmid · Starnberg, DE

Key dates

Filing date	Mar 29, 2007
Grant date	Feb 2, 2010
Priority date	—
Expiry date	Jan 17, 2028

Classification

Technology area (CPC G)Physics
CPC primaryG11C2013/009
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

An integrated circuit having a resistance-based or resistively switching memory cell, and a method for operating a resistively switching memory cell is disclosed. One embodiment is adapted to be put in a low-resistance state by applying a first threshold voltage and in a high-resistance state by applying a second threshold voltage, wherein reading out of the data content from the memory cell is performed by applying a voltage to the memory cell in the range of the first or second threshold voltage or a higher voltage.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.