Multi-level integrated photonic devices
US7656922B2 · kind B2 · utility
6Cited by
11References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2005 |
| Grant date | Feb 2, 2010 |
| Priority date | — |
| Expiry date | Sep 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34306
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.