Optoelectric high frequency modulator integrated on silicon
US7657146B2 · kind B2 · utility
7Cited by
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13Claims
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Key dates
| Filing date | Mar 29, 2005 |
| Grant date | Feb 2, 2010 |
| Priority date | — |
| Expiry date | Mar 29, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/06
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optoelectronic controller for regulating an optical signal. The controller includes a ridge or rib waveguide in an SOI-type substrate. The controller also includes an active zone formed by a plurality of thin layers of silicon. The layers are either N+ type doped or P+ type doped. The zone is defined between an N+ doped zone and a P+ doped zone which together form a PIN diode. The optoelectronic controller is all-silicon and operates by carrier desertion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.