Pattern area value calculating method, proximity effect correcting method, and charged particle beam writing method and apparatus
US7657863B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2007 |
| Grant date | Feb 2, 2010 |
| Priority date | — |
| Expiry date | Apr 26, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3174
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for calculating area values of a pattern written by using a charged particle beam, includes virtually dividing a pattern into a plurality of mesh-like first square regions surrounded by first grids defined at intervals of a predetermined size, virtually dividing the pattern into a plurality of mesh-like second square regions surrounded by second grids defined at intervals of the predetermined size, wherein the second grids being positionally deviated from the first grids by a half of the predetermined size, distributing an area value of a sub-pattern in each of the second square regions to a plurality of apexes of each of the second square regions such that a center-of-gravity position of the sub-pattern does not change, wherein the sub-pattern being a part of the pattern, and outputting the distributed area values as area values, for correcting a proximity effect, defined at the center position of each of the first square regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.