Patent · US Expired

Method of producing a topology-optimized electrode for a resonator in thin-film technology

US7657983B2 · kind B2 · utility

6Cited by

11References

20Claims

0Family size

Assignee

AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD. · SG

Inventors

Robert Aigner · Winter Garden, US
Luder Elbrecht · Hersbruck, DE
Stephan Marksteiner · Putzbrunn, DE
Winfried Nessler · Munich, DE

Key dates

Filing date	Jul 9, 2004
Grant date	Feb 9, 2010
Priority date	—
Expiry date	May 21, 2026

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T29/49155
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

In a method of producing an electrode for a resonator in thin-film technology, the electrode of the resonator is embedded in an insulating layer such that a surface of the electrode is exposed, and that a surface defined by the electrode and the insulating layer is substantially planar.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.