Patent · US Active

Exposure mask and method of manufacturing the same, and semiconductor device manufacturing method

US7659040B2 · kind B2 · utility

4Cited by
6References
11Claims
0Family size

Assignee

Inventor

Key dates

Filing dateAug 31, 2005
Grant dateFeb 9, 2010
Priority date
Expiry dateMay 15, 2027

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/201
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

An exposure mask 24, includes a quartz (transparent) substrate 20, a film 21 formed on the quartz substrate 20, a rectangular main feature 21a formed in the film 21, a first assist feature 21b formed in the film 21 away from the main feature 21a and having a size that is not resolved as a rectangle that has a long side 21e opposing to one side 21d of the main feature 21d, and a second assist feature 21c formed in the film 21 and positioned on a virtual prolonged line L of a diagonal of the main feature 21a and having a size that is not resolved.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.