Exposure mask and method of manufacturing the same, and semiconductor device manufacturing method
US7659040B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 31, 2005 |
| Grant date | Feb 9, 2010 |
| Priority date | — |
| Expiry date | May 15, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/201
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An exposure mask 24, includes a quartz (transparent) substrate 20, a film 21 formed on the quartz substrate 20, a rectangular main feature 21a formed in the film 21, a first assist feature 21b formed in the film 21 away from the main feature 21a and having a size that is not resolved as a rectangle that has a long side 21e opposing to one side 21d of the main feature 21d, and a second assist feature 21c formed in the film 21 and positioned on a virtual prolonged line L of a diagonal of the main feature 21a and having a size that is not resolved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.