Materials for photoresist, negative-tone photoresist composition, method of forming resist pattern, and semiconductor device
US7659047B2 · kind B2 · utility
4Cited by
1References
11Claims
0Family size
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Key dates
| Filing date | Dec 1, 2006 |
| Grant date | Feb 9, 2010 |
| Priority date | — |
| Expiry date | Dec 1, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0382
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
With the tendency of reducing the size of semiconductor circuit patterns, edge roughness on a resist pattern is increased when pattern dimensions required are close to the size of the resist molecules. Provided is a technique for preventing degradation of the device performance and negative effects over the system performance caused by the phenomena. A photoresist compound is used, which is a molecule having functional groups that are chemically converted due to an action of an acid with reduced solubility in alkaline developer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.