Method for manufacturing an organic semiconductor element
US7659138B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2004 |
| Grant date | Feb 9, 2010 |
| Priority date | — |
| Expiry date | Mar 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/621
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
In manufacturing a device using an organic TFT, it is essential to develop an element in which a channel length is short or a channel width is narrow to downsize a device. Based on the above, it is an object of the present invention to provide an organic TFT in which characteristic is improved. In view of the foregoing problem, one feature of the present invention is that an element is baked after an organic semiconductor film is deposited. More specifically, one feature of the present invention is that the organic semiconductor film is heated under atmospheric pressure or under reduced pressure. Moreover, a baking process may be carried out in an inert gas atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.