Method for forming silicon thin-film on flexible metal substrate
US7659185B2 · kind B2 · utility
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7References
40Claims
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Key dates
| Filing date | Sep 2, 2004 |
| Grant date | Feb 9, 2010 |
| Priority date | — |
| Expiry date | May 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are a method for forming a silicon thin-film on a substrate, and more particularly a method for forming a polycrystalline silicon thin-film of good quality on a flexible metal substrate. A metal substrate (110) is prepared and a surface of the metal substrate (110) is flattened. An insulation film (120) is formed on the metal substrate (110). An amorphous silicon layer (130) is formed on the insulation film (120). A metal layer (140) is formed on the amorphous silicon layer (130). A sample on the metal substrate (110) is heated and crystallized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.