Light-emitting diode
US7659555B2 · kind B2 · utility
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1References
13Claims
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Assignee
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Key dates
| Filing date | May 16, 2005 |
| Grant date | Feb 9, 2010 |
| Priority date | — |
| Expiry date | May 16, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/811
Abstract
A light-emitting diode (LED) and a method for manufacturing the same are described. The light-emitting diode has a metal substrate, a first transparent conductive layer, a first contact layer, and an illuminating epitaxial structure stacked in sequence. An ohmic contact layer is located on a portion of the illuminating epitaxial structure. A thickness of the metal substrate is greater than 40 μm. The first contact layer is a doped strained-layer-superlattices (SLS) structure. Additionally, the light-emitting diode can further be a reflective layer located between the metal substrate and the first transparent conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.