Semiconductor light-emitting device and method of fabricating the same
US7659557B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 2007 |
| Grant date | Feb 9, 2010 |
| Priority date | — |
| Expiry date | May 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/832
Abstract
The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second conductive type semiconductor material layer, a II-V group (or II-IV-V group) compound contact layer, a transparent conductive layer, and a second electrode. The existence of the II-V group (or II-IV-V group) compound contact layer improves the ohmic contact between the second conductive type semiconductor material layer and the transparent conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.