Semiconductor device having moisture-proof dam and method of fabricating the same
US7659601B2 · kind B2 · utility
1Cited by
7References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2007 |
| Grant date | Feb 9, 2010 |
| Priority date | — |
| Expiry date | Feb 26, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a moisture-proof dam and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating layer provided on a substrate having a fuse region. A fuse guard dam is provided on the interlayer insulating layer to surround the fuse region. A cover insulating layer is provided on the interlayer insulating layer to cover the fuse guard dam and have a fuse window exposing a middle part of the fuse region, and at least two upper extension dams are provided in the cover insulating layer to sequentially surround the fuse region and be connected to the fuse guard dam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.