Semiconductor device having a nanoscale conductive structure
US7659624B2 · kind B2 · utility
4Cited by
1References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2007 |
| Grant date | Feb 9, 2010 |
| Priority date | — |
| Expiry date | Aug 17, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, an insulating layer having an opening, the opening exposing a portion of the substrate, a hydrophobic layer covering substantially only a sidewall and a top surface of the insulating layer, and a nanoscale conductive structure on the exposed portion of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.