Contact structure comprising semiconductor and metal islands
US7659628B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2005 |
| Grant date | Feb 9, 2010 |
| Priority date | — |
| Expiry date | Jul 20, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
Abstract
Contact structures and methods for forming such contact structures are disclosed. An example contact structure includes a layer of semiconductor material having an interface and an electrical contact at the interface of the layer of semiconductor material, where the electrical contact includes a granular metal. An example method for forming a contact structure includes providing a substrate and producing a granular metal on at least part of the substrate, where the granular metal includes a cluster of metal islands extending essentially in a two-dimensional plane. The method further includes depositing a layer of a semiconductor material on top of the substrate and the cluster of metal islands.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.