CMOS power switching circuit usable in DC-DC converter
US7659754B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2007 |
| Grant date | Feb 9, 2010 |
| Priority date | — |
| Expiry date | Feb 20, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0036
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A power switching circuit in CMOS technology has a power MOS transistor and a driver stage. The power MOS transistor is operated at a higher supply voltage in excess of its maximum allowable gate-source voltage; and the driver stage of the level shifter is operated at a lower supply voltage substantially lower than the supply voltage for the power MOS transistor. The driver stage includes a pair of driver MOS transistors coupled in series between a higher supply voltage rail and a reference potential rail, and at an interconnection node coupled to the gate of the power MOS transistor. The gates of the driver MOS transistors are AC-coupled to drive signals of mutually opposite phase; and the gates of the driver MOS transistors are each connected to the higher voltage supply rail through a respective parallel connection of a first resistor and a second resistor connected in series with a non-linear component. The resistance value of the second resistor is substantially smaller than the resistance value of the first resistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.