Memory device and memory
US7660153B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2008 |
| Grant date | Feb 9, 2010 |
| Priority date | — |
| Expiry date | Feb 29, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1659
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device is provided. The memory device includes a memory layer and a fixed-magnetization layer. The memory layer retains information based on a magnetization state of a magnetic material. The fixed-magnetization layer is formed on the memory layer through an intermediate layer made of an insulating material. The information is recorded on the memory layer with a change in a magnetization direction of the memory layer caused by injecting a spin-polarized electron in a stacked direction. A level of effective demagnetizing field, which is received by the memory layer, is smaller than a saturation-magnetization level of magnetization of the memory layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.