High-speed diamond growth using a microwave plasma in pulsed mode
US7662441B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 18, 2003 |
| Grant date | Feb 16, 2010 |
| Priority date | — |
| Expiry date | Jun 18, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S427/106
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is a method for manufacturing a diamond film of electronic quality at a high rate using a pulsed microwave plasma. The plasma that has a finite volume is formed near a substrate (in a vacuum chamber) by subjecting a gas containing at least hydrogen and carbon to a pulsed discharge. The pulsed discharge has a succession of low-power states and of high-power states and a peak absorbed power PC, in order to obtain carbon-containing radicals in the plasma. These carbon-containing radicals are deposited on the substrate in order to form a diamond film. Power is injected into the volume of the plasma with a peak power density of at least 100 W/cm3, while maintaining the substrate to a substrate temperature of between 700° C. and 1000 ° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.