III-nitride light emitting device with reduced strain light emitting layer

US7663148B2 · kind B2 · utility

Assignee

• Philips Lumileds Lighting Company LLC · US

Inventors

• Sungsoo Yi · Sunnyvale, US
• Aurelien J. F. David · Fremont, US
• Nathan Gardner · Provo, US
• Michael R. Krames · Los Altos, US
• Linda Romano · Sunnyvale, US

Key dates

• Filing date: Dec 22, 2006
• Grant date: Feb 16, 2010
• Expiry date: Dec 22, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/82

Abstract

In accordance with embodiments of the invention, strain is reduced in the light emitting layer of a III-nitride device by including a strain-relieved layer in the device. The surface on which the strain-relieved layer is grown is configured such that strain-relieved layer can expand laterally and at least partially relax. In some embodiments of the invention, the strain-relieved layer is grown over a textured semiconductor layer or a mask layer. In some embodiments of the invention, the strain-relieved layer is group of posts of semiconductor material.