Transparent-channel thin-film transistor-based pixels for high-performance image sensors
US7663165B2 · kind B2 · utility
97Cited by
10References
53Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 31, 2006 |
| Grant date | Feb 16, 2010 |
| Priority date | — |
| Expiry date | Apr 9, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/1865
Abstract
A pixel circuit, and method of forming a pixel circuit, an imager device, and a processing system include a photo-conversion device, a floating diffusion region for receiving and storing charge from the photo-conversion device, and a transparent transistor for use in operation of the pixel, wherein the transparent transistor is at least partially over the photo-conversion device, such that the photo-conversion device receives light passing through the transparent transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.