Butted contact structure
US7663237B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2005 |
| Grant date | Feb 16, 2010 |
| Priority date | — |
| Expiry date | Jul 31, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure and a method of forming the same using replacement gate processes are provided. The semiconductor structure includes a butted contact coupling a source/drain region, or a silicide on the source/drain region, of a first transistor and a gate extension. The semiconductor structure further includes a contact pad over the source/drain region of the first transistor and electrically coupled to the source/drain region. The addition of the contact pad reduces the contact resistance and the possibility that an open circuit is formed between the butted contact and the source/drain region. The contact pad preferably has a top surface substantially leveled with a top surface of the gate extension.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.