Phase change memory devices and methods for fabricating the same
US7667221B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2007 |
| Grant date | Feb 23, 2010 |
| Priority date | — |
| Expiry date | Dec 31, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/90
Abstract
In a phase change memory, an interlayer insulating layer is disposed on a substrate. A heater plug includes a lower portion disposed in a contact hole penetrating the interlayer insulating layer and an upper portion protruding upward over the top surface of the interlayer insulating layer. A phase change pattern is disposed on the interlayer insulating layer to cover the top surface and the side surface of the protruding portion of the heater plug. An insulating spacer is interposed between the phase change pattern and the side surface of the protruding portion of the heater plug. A capping electrode is disposed on the phase change pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.