Integrated circuit comprising at least one capacitor and process for forming the capacitor
US7667292B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 1, 2006 |
| Grant date | Feb 23, 2010 |
| Priority date | — |
| Expiry date | Jul 25, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02164
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit includes at least one capacitor that is formed on a layer provided with at least one first trench. The capacitor, which is provided with a dielectric layer that separates two electrodes, conforms to the shape of the first trench, but leaves a part of the first trench unfilled. A material capable of absorbing stresses associated with the displacements of the walls of the trench is placed in the trench to fill the part of the first trench. A second trench is formed at least partly surrounding the first trench. This second trench is also at least partly filled with a material capable of absorbing stresses associated with the displacements of the walls of the second trench. A void may be included in the stress absorbing material which fills either of the first or second trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.